Journal of Materials Science and Nanotechnology

Giorgio Biasiol received his Bachelor degree in Physics at the University of Trieste, Italy in 1992;he then spent a two-year period as a Research Specialist at the Department of Chemical Engineering and Materials Science, University of Minnesota, MN. In 1994 he moved to the Federal Institute of Technology (EPFL), Lausanne, Switzerland, where he received his Ph.D. degree in Physics in 1998. The results of his activity were rewarded by the Young Author Best Paper Award at the 24th International Conference on the Physics of Semiconductors in Jerusalem, Israel in 1998.In 1999 he joined the CNR-IOM, TASC Laboratory in Trieste, Italy, where he is still part of the permanent staff as a development scientist and lab director. His present activity is mainly focused on the growth by Molecular Beam Epitaxy and characterization of high purity semiconductor nanostructures and heterostructures with applications in fields such as photonics, quantum transport, biosensors, spintronics, plasmonics, support to large-scale facilities and surface science. He is involved in several national and international collaborations with institutes such as University of Padova, Paris-Diderot, Zaragoza, Nijmegen, Pavia, Konstanz, EPFL Lausanne, Alabama, Modena, the Russian Academy of Sciences, andScuolaNormaleSuperiorein Pisa. He has been coordinator/local coordinator for 8 National research projects and 3 commercial contracts, involved in more than 20 National and European research projects, and reviewer for several National and international grants. He is member of the International Foresight Science & Technology Group of CNR, which undertakes monitoring and analysis support activities for CNR future strategies. He has authored more than 150 papers on peer reviewed international journals and 5 invited papers and book chapters; he has been guest editor for the special issue "Epitaxial Materials", journal "Materials" (MDPI Publisher).

Epitaxial techniques: Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD).
Epitaxial growth of semiconductor nano- and heterostructures for photonics and information technologies.
Synthesis of self-assembled semiconductor nanostructures.